general purpose transistors maximum ratings rating symbol max unit collector-emitter voltage v ceo 25 v collector-base voltage v cbo 40 v emitter-base voltage v ebo 5v collector current-continuoun i c 800 madc thermal characteristics characteristic symbol max unit total device dissipation fr-5 board,(1) p d t a =25c 225 mw derate above 25c 1.8 mw/c thermal resistance,junction to ambient r ja 556 c/w total device dissipation p d alumina substrate,(2) ta=25c 300 mw derate above 25c 2.4 mw/c thermal resistance,junction to ambient r ja 417 c/w junction and storage temperature t j, t s t g -55 to +150 c sotC23 1 base 2 emitter collector 3 feature ?high current capacity in compact package. i c = 0.8a. ?epitaxial planar type. ?npn complement: 8050 ? device marking and ordering information device marking 8050plt1 80p 8050qlt1 1yc shipping 3000/tape&reel 3000/tape&reel npn silicon 8050rlt1 1ye 3000/tape&reel 2012- willas electronic corp. 8050XLT1
electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-emitter breakdown voltage v (br)ceo 25 CC v (i c =1.0ma) emitter-base breakdown voltage v (br)ebo 5 CC v (i e =100 ? ) collector-base breakdown voltage v (br)cbo 40 CC v (i c =100 ? ) collector cutoff current (v cb =35v) i cbo C C 150 na emitter cutoff current (v eb =4v) i ebo C C 150 na note : * pqr h fe 100~200 150~300 200-400 electrical characteristics (t a =25c unless otherwise noted) charateristic unit dc current gain i c =100ma,v ce =1v h fe 100 - 400 collector-emitter saturation voltage ( i c v ce(sat) -- symbol min typ max 0.5 mhz v =800ma, =80ma) i b 2012- willas electronic corp. general purpose transistors 8050XLT1
fig.5 - capacitance & r everse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage (v) capacitance ( pf) cob fig.4 - cutoff frequency & collector current 1 10 100 1000 1 10 100 1000 collector c urrent (ma) cutoff frequen cy (mhz) v ce =10v fig.3 - on volta ge & c olle c to r current 0.1 1 0.01 0.1 1 10 100 1000 collector cur rent (ma) on voltage (v) v be(on) @ v ce =1v fig.1 - current gain & colle c to r current 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 collector c urrent (ma) hfe v ce =1v fig.2 - saturation vol tage & collector current 0.01 0.1 1 0.01 0.1 1 10 100 1000 collector c urrent (ma) saturation vol tage (v) v ce(sat) @ i c =10i b 2012- willas electronic corp. general purpose transistors 8050XLT1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- willas electronic corp. general purpose transistors 8050XLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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